Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 79: Photovoltaics: Mainly Silicon

HL 79.6: Talk

Thursday, March 17, 2011, 16:00–16:15, FOE Anorg

(contribution withdrawn) Shunts in Thin-Film Photovoltaics — •Stephanie Malek¹, Uli F. Wischnath², Juan Rechid³, Ingo Riedel¹, and Jürgen Parisi¹ — ¹Energy and Semiconductor Research Laboratory, Department of Physics, University of Oldenburg, 26111 Oldenburg, Germany — ²aleo solar Deutschland GmbH, 26122 Oldenburg, Germany — ³CIS Solartechnik GmbH & Co. KG, 20539 Hamburg, Germany

Shunts can lead to severe performance reduction in thin film solar cells. This work reports on a microscopic approach to locate and characterize the details of shunts in order to reveal their origin. Localization of hot spots and film disruptions is commonly addressed by lock-in infrared thermography (LIT) through visualization of the Joule heating. The resolution of this method is restricted to the μm-range. We use different methods of LIT for the fast localization of local-lateral peculiarities in order to identify positions of interest. For a more detailed analysis of these features we use high resolution microscopy like Scanning Electron Microscopy (SEM) and AFM-based methods. These small-scale investigations can for example reveal whether areas of high heat dissipation are rather related to the inner structure of the involved thin films or to accidentally incorporated imperfections.