Dresden 2011 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 79: Photovoltaics: Mainly Silicon
HL 79.7: Talk
Thursday, March 17, 2011, 16:15–16:30, FOE Anorg
Scanning Spreading Resistance Microscopy for Characterization of Laser Doped Selective Emitter Structures in Solar Cells — •Stefan Doering1, Stefan Jakschik1, Thomas Mikolajick1,2, Jens Krause3, Rico Böhme3, and Marc Petri3 — 1NaMLab gGmbH, Dresden, Germany — 2TU Dresden, Dresden, Germany — 3Roth & Rau AG, Hohenstein-Ernstthal, Germany
Focus of our work is the visualization of local heavily laser doped selective emitter (LDSE) structures with a self-aligned metallization via plating in mono crystalline silicon solar cells. The LDSE process was developed at the University of New South Wales (UNSW) and enables high conductive metal fingers with a low contact resistance to the emitter, thus allowing the finger dimensions to be reduced significantly. As a result, the amount of light per area that is used for energy conversion is increased, leading to an increase in cell efficiency. The lower doped full area emitter leads to a better blue response and contributes to cell efficiency improvements, too.
Scanning Spreading Resistance Microscopy (SSRM) is known as a powerful tool for quantitative visualization of activated dopants in semiconductor materials. In this work we present SSRM measurements, showing the laser doped selective emitter diffusion into the bulk silicon. Dimensions of the LDSE as width and length can be extracted from the measured data. To our knowledge it is the first time the lateral dimensions of selective emitter activated dopants fabricated by laser annealing are visualized by SSRM in high lateral resolution.