Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 8: Joint Focussed Session: Thin Film Chalcogenide Photovoltaics I

HL 8.3: Topical Talk

Monday, March 14, 2011, 12:00–12:30, GER 37

From Micro Meter to Mega Watt: Pentanary Chalcopyrite Thin film Solar Cells — Joerg Palm, Alejandro Avellan, •Thomas Dalibor, Stefan Jost, Helmut Vogt, Thomas Niesen, Paul Mogensen, and Franz Karg — AVANCIS GmbH & Co KG, Otto-Hahn Ring 6, 81739 München

CIS based thin film solar cells and modules are currently entering the phase of mass production with hundreds of megawatts capacity per year. This presentation illustrates how materials and device research in cooperation between industrial R&D and university groups significantly support the development of highly efficient solar cells. The pentanary chalcopyrite absorber film based on Cu, In, Ga, Se and S is preferably formed in a two stage process by chalcogenization of metal precursor films. The understanding of the reaction paths from metals via binaries to the pentanary phase has been deepened by X-ray diffraction studies. The chalcopyrite/II-VI hetero-junction is a complex interface between absorber surface region, buffer layers and the transparent conducting oxide. Several heterojunction partners are being investigated in terms of device efficiency, band alignment and interface structure. The physical processes involved in layer removal for monolithic interconnection completely change while going from mechanical patterning via nanosecond pulsed laser to ultrashort laser pulses. Device simulation helps identifying loss mechanisms in the solar cell structure. In the AVANCIS pilotline modules of size 30cm x30cm are processed with a record efficiency well above 15%. We finally present the realization of a mass production process at AVANCIS.