Dresden 2011 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 80: Focussed Session: Novel Green Laser Diodes

HL 80.1: Hauptvortrag

Donnerstag, 17. März 2011, 14:30–15:00, POT 51

(contribution withdrawn) GaN-based green laser diodes grown on c-plane GaN substrate — •Shinichi Nagahama — Nitride Semiconductor Research Laboratory, Nichia Corporation, 491 Oka, Kaminakacho, Anan, Tokushima 774-8601, Japan

We have succeeded in developing the GaN-based green laser diodes (LDs) with an emission wavelength of 510-515 nm and output power of 50 mW for the green light source in the small laser projectors.The green LDs structures were grown on conventional c-plane GaN substrates by metal organic chemical vapour deposition. The operating current and threshold voltage with an output power of 50mW were 200 mA and 5.0 V, respectively. The lifetime test of these LDs was carried out under high driving temperature up to 60 °C in cw operation. Lifetime was estimated to be over 10,000 h with an optical output power of 50mW. These results ensure that GaN-based LDs is the best candidate for the green light source in the future small laser display applications.