HL 80: Focussed Session: Novel Green Laser Diodes
Donnerstag, 17. März 2011, 14:30–17:15, POT 51
 |
14:30 |
HL 80.1 |
Hauptvortrag:
(contribution withdrawn) GaN-based green laser diodes grown on c-plane GaN substrate — •Shinichi Nagahama
|
|
|
|
15:00 |
HL 80.2 |
Hauptvortrag:
(contribution withdrawn) Room-temperature CW operation of BeZnCdSe green laser diode — •shigehisa tanaka, jun-ichi kasai, sumiko fujisaki, ryouichi akimoto, takeshi kikawa, shinji tsuji, haruhiko kuwatsuka, toshifumi hasama, and hiroshi ishikawa
|
|
|
|
15:30 |
HL 80.3 |
Hauptvortrag:
Growth and properties of semi-polar GaN on patterned silicon substrate — •Nobuhiko Sawaki
|
|
|
|
16:15 |
HL 80.4 |
Hauptvortrag:
Advantages of Using Semipolar Orientation for Making Green InGaN QW Laser Diodes. — •Dmitry Sizov, Rajaram Bhat, Kechang Song, and Chung-en Zah
|
|
|
|
16:45 |
HL 80.5 |
Hauptvortrag:
Optical gain of green (Al,In)GaN laser diodes — •Ulrich Schwarz
|
|
|