Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.101: Poster

Thursday, March 17, 2011, 18:00–21:00, P4

Growth of GaAs-Nanowires on GaAs (111)B substrates induced by focused ion beam — •Rüdiger Schott, Dirk Reuter, and Andreas D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum

Semiconductor nanowires are a promising system for applications in the areas of electronics and photonics and also for exploring phenomena at the nanoscale. There are several approaches to grow nanowires at arbitrary sites on the wafer. We report about growing GaAs-nanowires on GaAs (111)B substrates via the vapour-liquid-solid (VLS) mechanism in an ultra-high-vacuum (UHV)-cluster of a molecular beam epitaxy (MBE) and a focused ion beam (FIB) system. Our idea is to implant metal seeds (especially Au) for the nanowire growth by in situ patterning using FIB. Due to the UHV transfer between the FIB and the MBE chamber, no further cleaning step of the substrate surface is necessary. Formations of organized GaAs-nanowires and high aspect ratios are observed.