Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 85: Poster Session II
HL 85.104: Poster
Donnerstag, 17. März 2011, 18:00–21:00, P4
X-ray characterization Si-doped InAs nanowires grown on GaAs — •Muhammad Saqib1, Andreas Biermanns1, Thomas Grap2, Mihail Lepsa2, and Ullrich Pietsch1 — 1Universität Siegen, Festkörperphysik, Germany — 2Forschungszentrum Jülich, Institut für Bio- und Nanosysteme (IBN-1),Germany
Semiconductor nanowires (NW) are of particular interest due to the ability to synthesize single-crystalline 1D epitaxial structures and heterostructures in the nanometer range. However, many details of the growth mechanism are not well understood. In particular, understanding and control of doping mechanisms during NW growth are important issues for technological applications. In this contribution we present a x-ray diffraction study of the influence of Si-doping in InAs NWs grown on GaAs (111) substrates using In-assisted MBE growth. With the help of coplanar and asymmetric x-ray diffraction, we monitor the evolution of the lattice constants and structure of the InAs NWs as function of doping concentration. We observe that increasing the nominal doping concentration leads to the appearance of additional diffraction maxima corresponding to material whose vertical lattice parameter is 1% smaller than that of the undoped nanowires. Those lattice parameters can be attributed with alloy formation in the form of island like crystallites.