Dresden 2011 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.105: Poster

Donnerstag, 17. März 2011, 18:00–21:00, P4

Electronic transport properties of InAs nanowires — •Önder Gül, Christian Blömers, Hilde Hardtdegen, Mihail Ion Lepsa, Kamil Sladek, Andreas Penz, Thomas Grap, Detlev Grützmacher, and Thomas Schäpers — Institute of Bio- and Nanosystems (IBN-1) and JARA - Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany

III-V nanowires have recently attracted a lot of interest, because they are promising building blocks for future nanoscale applications, such as high density field effect transistors, high performance solar cells or sensing devices. In this context, InAs is especially interesting because of its low effective electron mass, its high predicted electron mobility, and its low direct band gap. Additionally ohmic contacts are easy to prepare because of the intrinsic surface electron accumulation. We investigated the transport properties of InAs nanowires, grown by means of molecular beam epitaxy and metal organic vapor phase epitaxy. In a temperature range from 300K down to 4K we determined basic transport parameters such as contact resistance, resistivity, mobility, and carrier concentration. At low temperatures, magnetotransport measurements were carried out in order to observe electron interference effects.