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HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.111: Poster

Thursday, March 17, 2011, 18:00–21:00, P4

Control of the carrier density of an inverted GaAs/Al_xGa_1−xAs high electron mobility transistor (HEMT) heterostructure with embedded quantum dots via a backgate — •Sascha René Valentin, Arne Ludwig, Dirk Reuter, and Andreas D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstrasse 150, D-44780 Bochum

InAs quantumdots coupled to a two-dimensional electron gas (2DEG) are already widely studied but the tuning of the charge of the quantum dots is always accompanied by a change of the carrier density of the 2DES. In this contribution we show a structure with a backgate which is capable of charging the quantum dots independently of the density of the carriers in the 2DEG. Different approaches for such a backgated structure will be discussed.