Dresden 2011 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.127: Poster

Thursday, March 17, 2011, 18:00–21:00, P4

Optoelectronical properties of InGaN quantum well light emitting diodes on semipolar GaN — •Jens Rass, Marcus Stascheit, Simon Ploch, Tim Wernicke, Patrick Vogt, and Michael Kneissl — Technische Universitaet Berlin, Institute of Solid State Physics, Secretariat EW6-1, Hardenbergstrasse 36, 10623 Berlin, Germany

The performance of GaN-based light emitting diodes (LEDs) is strongly affected by polarization fields along the c-axis of the crystal. Due to the resulting quantum-confined Stark effect the radiative transition rate is reduced and the emission wavelength is blue-shifted when carriers are injected. By growing the structures on semipolar or nonpolar planes the polarization fields can be significantly reduced or even eliminated. In this work, InGaN single quantum well LEDs have been grown by metal-organic vapor phase epitaxy on different semipolar surfaces such as the (1011) and (2021) plane. The optoelectronic properties such as the light output power, the emission wavelength and its shift with injection current as well as the operating voltage have been studied. By employing capacitance-voltage- and current-voltage measurements, the size of the depletion region, the build-in potential, the saturation current and the doping concentrations have been determined. LEDs with emission wavelengths ranging from the violet to the blue and green region are presented and their performance characteristics are compared to LEDs grown on the polar c-plane surface.