Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.18: Poster

Thursday, March 17, 2011, 18:00–21:00, P4

Photoluminescence of Ga(AsBi) — •Nils Rosemann¹, Alexej Chernikov¹, Verena Bornwasser¹, Niko S. Köster¹, Martin Koch¹, Kolja Kolata¹, Sangam Chetterjee¹, Stephan W. Koch¹, Sebastian Imhof², Christian Wagner², Angela Tränhardt², Xianfeng Lu³, Shane R. Johnson³, Dan A. Beaton⁴, Thomas Tiedje⁵, and Oleg Rubel^6,7 — ¹Fachbereich Physik, Philipps-Universität Marburg, 35032 Marburg, Germany — ²Institut für Physik, Technische Universität Chemnitz, 09107 Chemnitz, Germany — ³Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-6206, USA — ⁴Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada — ⁵Department of Electrical and Computer Engineering, University of Victoria, Victoria, British Columbia V8W 3P6, Canada — ⁶Thunder Bay Regional Research Institute, Thunder Bay, Ontario P7A 7T1, Canada — ⁷Department of Physics, Lakehead University, Thunder Bay, Ontario P7B 5E1, Canada

Ga(AsBi) is a promising candidate for GaAs-based near-infrared emitters at telecommunication wavelength. To evaluate the potential of this material system we study the photoluminescence from such a bulk sample as function of pump power and lattice temperature. Strong disorder-related features are observed. To better quantify the experiments we analyze the data using a Monte Carlo approach. A two-scale model is introduced to account for both cluster localization and alloy disorder.