Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 85: Poster Session II
HL 85.18: Poster
Thursday, March 17, 2011, 18:00–21:00, P4
Photoluminescence of Ga(AsBi) — •Nils Rosemann1, Alexej Chernikov1, Verena Bornwasser1, Niko S. Köster1, Martin Koch1, Kolja Kolata1, Sangam Chetterjee1, Stephan W. Koch1, Sebastian Imhof2, Christian Wagner2, Angela Tränhardt2, Xianfeng Lu3, Shane R. Johnson3, Dan A. Beaton4, Thomas Tiedje5, and Oleg Rubel6,7 — 1Fachbereich Physik, Philipps-Universität Marburg, 35032 Marburg, Germany — 2Institut für Physik, Technische Universität Chemnitz, 09107 Chemnitz, Germany — 3Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-6206, USA — 4Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada — 5Department of Electrical and Computer Engineering, University of Victoria, Victoria, British Columbia V8W 3P6, Canada — 6Thunder Bay Regional Research Institute, Thunder Bay, Ontario P7A 7T1, Canada — 7Department of Physics, Lakehead University, Thunder Bay, Ontario P7B 5E1, Canada
Ga(AsBi) is a promising candidate for GaAs-based near-infrared emitters at telecommunication wavelength. To evaluate the potential of this material system we study the photoluminescence from such a bulk sample as function of pump power and lattice temperature. Strong disorder-related features are observed. To better quantify the experiments we analyze the data using a Monte Carlo approach. A two-scale model is introduced to account for both cluster localization and alloy disorder.