Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.19: Poster

Thursday, March 17, 2011, 18:00–21:00, P4

Optical properties of positioned InAs-based nanowire arrays — •Andreas Brenneis, Simon Hertenberger, Sonja Matich, Gerhard Abstreiter, Alexander Holleitner, and Gregor Koblmüller — Walter Schottky Institut and Physik Department, TUM Garching, Germany

Small bandgap semiconducting nanowires allow fabricating nanoscale light-sensitive devices like broadband solar cells or mid-infrared (mir) photodetectors. We discuss the optical properties of positioned InAs-based nanowires. To this end, p-Si(111) substrates with a top layer of SiO₂ are structured via e-beam lithography by holes with a diameter of approximately 80 nm. The nanowires are then grown vertically on the substrates by solid-source molecular beam epitaxy. The optical properties of the nanowires are characterized by FTIR transmission and angle dependent reflection measurements. To fabricate optoelectronic devices, we subsequently embed the nanowires in an insulator (SiO₂ by PECVD and PVD; SOG). After an etch back step, the nanowires are then contacted by depositing a thin conducting layer on top. The p-Si substrate provides the second electronic contact of the optoelectronic two-terminal devices.