Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 85: Poster Session II
HL 85.20: Poster
Donnerstag, 17. März 2011, 18:00–21:00, P4
Optical investigation on a monolithic planar microcavity containing InP quantum dots as active medium — •Marcus Müller1, Alexander Franke1, Thomas Hempel1, Jürgen Christen1, Wolfgang-Michael Schulz2, Marcus Eichfelder2, Robert Rossbach2, Michael Jetter2, and Peter Michler2 — 1Otto-von-Guericke-University Magdeburg, Institut of Experimental Physics, Germany — 2Universität Stuttgart, Institut Für Halbleiteroptik und Funktionelle Grenzflächen, Germany
The change of the spontaneous emission properties by the resonator of a planar VCSEL structure was analyzed using spatially resolved photoluminescence (PL). The samples consists of a λ GaInP cavity embedding InP quantum dots (QDs) as active medium grown on top of an 45 layer AlAs/Al0. 5GaAs bottom distributed Bragg reflector (DBR). For comparison samples without, 10 AlAs/Al0. 5GaAs and 34 Al0.5 GaAs/Al0.95GaAs layer pairs were grown. Integral PL spectra taken at each sample show a dominant QD emission in the red spectral range at 1.84 eV.
To achieve a stronger carrier confinement the InP-QDs were embedded inside an AlGaInP cavity, too. PL spectra taken at the structure without top DBR show again QD emission at 1.84 eV. In addition a second emission line at 1.63 eV arises from the formation of different type of QDs.
The optical and structural behavior of both QD species was investigated using excitation and temperature dependent PL as well as scanning electron and atomic force microscopy.