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HL: Fachverband Halbleiterphysik
HL 85: Poster Session II
HL 85.30: Poster
Donnerstag, 17. März 2011, 18:00–21:00, P4
Anisotropic and spin polarization dependent spin dephasing in a 110-grown high-mobility AlGaAs/GaAs quantum well measured by resonant spin amplification technique — •M. Griesbeck1, V. Lechner1, I. Caspers1, M. Glazov3, T. Korn1, D. Schuh1, W. Wegscheider1,2, and C. Schüller1 — 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany — 2present adress: ETH Zürich, 8093 Zürich, Switzerland — 3A.F. Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia
The spin dynamics in zincblende-based two-dimensional electron systems (2DESs) are dominated in many cases by the D’yakonov-Perel spin dephasing mechanism and the underlying spin orbit (SO) fields. One exception can be found in symmetrically grown and doped AlGaAs/GaAs quantum wells with the growth axis along the 110-direction, where the Rashba contribution is neglectable and the effective Dresselhaus type SO field is perpendicular to the sample plane. In such a system, consisting of a 30 nm-wide double-sided δ-doped single quantum well with a very high mobility of about 3 million cm2/Vs, we observed the expected strongly anisotropic spin lifetimes for in- and out-of-plane spin orientations by resonant spin amplification (RSA) measurements. In our experiments, the ratio of in-plane and out-of-plane spin lifetimes is strongly dependent on the sample temperature, the excitation density and also the initial spin polarization of the 2DES. The shape of the RSA traces is modeled using an analytical expression, from which the SDTs are extracted.