Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 85: Poster Session II
HL 85.35: Poster
Donnerstag, 17. März 2011, 18:00–21:00, P4
Linear and non-linear properties of ballistic electron-focusing devices — •Arkadius Ganczarczyk1, Martin Geller1, Axel Lorke1, Dirk Reuter2, and Andreas D. Wieck2 — 1Experimental Physics and CeNIDE, Universität Duisburg-Essen — 2Chair of Applied Solid State Physics, Ruhr-Universität Bochum
Ballistic electron focusing in nanostructured, two-dimensional electron gases was first demonstrated more than 20 years ago [1]. While the linear transport characteristics of such devices were examined in detail, possible nonlinear effects of the device were investigated to a lesser extent so far. However, non-linear transport may be of great interest for possible functional devices such as ballistic rectifiers and transistors.
In this work detailed studies of non-linear (and linear) transport properties of ballistic electron focusing devices are presented. For increasing negative injection bias (emission of electrons above the Fermi energy EF), we observe an increase in the resonant magnetic field in agreement with the increased velocity of the injected electrons. For small positive bias, a similar electron focusing pattern is observed as for negative bias, which can be understood in the framework of electron-hole-symmetry. For increasing positive bias, however, the resonances are shifted towards smaller magnetic fields, indicating that the transport can also be probed for (missing) carriers below EF [2].
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