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Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.38: Poster

Thursday, March 17, 2011, 18:00–21:00, P4

Concept of a ballistic transfer device in a GaAs/AlGaAs 4-terminal structure using electron refraction — •Michael Szelong1, Daniel Salloch1, Ulrich Kunze1, Dirk Reuter2, and Andreas Wieck21Lehrstuhl für Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum — 2Lehrstuhl für angewandte Festkörperphysik, Ruhr-Universität Bochum

We present a concept of a ballistic four-terminal device based on electron trajectory refraction, resembling a directional coupler. The device structure consists of a straight stem (1 µm wide and 2 µm long) while two branches merge at each end of the stem under an angle of 45 (27) with the stem’s longer axis of symmetry. Devices with different angles and injector widths are processed on a high-mobility GaAs/AlGaAs heterostructure with a two-dimensional electron density and mobility of n2D = 2 · 1011 cm−2 and µ = 2.4 · 106 cm2/Vs, respectively, resulting in a mean free path of 18 µm at T = 4.2 K. A mix-and-match process is used which combines the advantages of nano-scale electron beam lithography with time-saving UV-lithography. The resist pattern is transferred into the heterostructure by wet etching in a citric acid solution. After contact alloying a local Schottky-gate is deposited onto the stem. Electron trajectories, starting at one branch, will be refracted at the boundary of the gate-controlled region according to Snell’s law of electron refraction [1]. Depending on the direction of refraction electrons will be reflected more or less often at the stem’s boundaries and finally hit one of the opposite branches.
[1] Spector et al., Appl. Phys. Lett. 56, 2433 (1990)

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