Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 85: Poster Session II
HL 85.50: Poster
Donnerstag, 17. März 2011, 18:00–21:00, P4
Low-temperature processed Schottky-gated field-effect transistors based on amorphous oxide channel material — •Michael Lorenz1, Alexander Lajn1, Heiko Frenzel1, Holger von Wenckstern1, Marius Grundmann1, Pedro Barquinha2, Elvira Fortunato2, and Rodrigo Martins2 — 1Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig — 2CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, 2829-516 Caparica, Portugal
We demonstrate metal-semiconductor field-effect transistors based on room temperature deposited indium-zinc-oxide and gallium-indium-zinc-oxide channel material on Corning 1737 glass substrates by radio-frequency magnetron sputtering. The devices were processed by standard photolithography using lift-off technique and metalization of the electrodes was accomplished by dc-magnetron sputtering. The best devices exhibit a subthreshold swing of S = 69 mV/decade and gate sweep voltages of 1.6 V, reach field-effect mobilities up to 15 cm2/Vs and on-off-current ratios over 8 orders of magnitude [1]. The influence of a low temperature annealing step (T=150∘C) for the thin-films is furthermore investigated.
[1] M. Lorenz et al., Appl. Phys. Lett., in press (2010)