Dresden 2011 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.52: Poster

Donnerstag, 17. März 2011, 18:00–21:00, P4

Transverse thermoelectric devices — •Christina Reitmaier and Hans Lengfellner — University of Regensburg, 93053 Regensburg, Germany

Multilayer structures A−B−A... consisting of alternating layers of a metal A and a semiconductor B can show large anisotropy in their transport properties, depending on the properties of the constituents. Multilayer stacks, prepared of alternating layers of Pb and n-type Bi₂Te₃, were obtained by a heating procedure. Depending on thickness ratio p = d_BiTe/d_Pb, where d_BiTe and d_Pb are the thicknesses of Bi₂Te₃ and Pb layers, respectively, a large thermoelectric anisotropy up to Δ S ≈ 200 µ V/K was observed. In tilted multilayer structures, where layer planes and sample surface include a nonzero tilt angle, non-vanishing off-diagonal elements in the sample’s transport tensors lead to transverse Seebeck- and Peltier effects. Achievable temperature differences and figures of merit for transverse Peltier cooling are discussed and compared with experiments, coefficients of performance for transverse power generation are calculated.