Dresden 2011 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.55: Poster

Donnerstag, 17. März 2011, 18:00–21:00, P4

Optical Characteristics of an InP/AlGaInP quantum dot laser emitting at 660 nm — •Jan Wagner, Wolfgang-Michael Schulz, Marcus Eichfelder, Robert Roßbach, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

Semiconductor quantum dot (QD) laser diodes have gained much interest in recent years due to their superiority in many properties over regular quantum well (QW) lasers. Especially in the visible red spectral range (630-710 nm) QD laser would enhance applications like data storage, medical applications e.g. photodynamic therapy (PDT), pumping solid state lasers or display applications e.g. laser projection. Theory predicts better properties compared to standard quantum well (QW) lasers due to the zero-dimensional character of the structure. For example lower threshold current density, higher differential gain, and higher temperature stability are expected. We characterized electrically pulsed InP/AlGaInP quantum dot lasers with different length at different operating parameters, which are pulse width, frequency and temperature. We achieved lasing operation at room temperature with a relatively low threshold current density of 792 A/cm² and a lasing wavelength of 660 nm with an optical output power of more than 41 mW per facet.