DPG Phi
Verhandlungen
Verhandlungen
DPG

Dresden 2011 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.62: Poster

Thursday, March 17, 2011, 18:00–21:00, P4

Spatially resolved photoluminescence and AFM measurements on Cu(In,Ga)Se2-based thin film absorbers prepared with different throughput speeds — •Max Meessen1, Oliver Neumann1, Stephan J. Heise1, Rudolf Brüggemann1, Wolfram Witte2, Dimitrios Hariskos2, and Gottfried H. Bauer11Institut für Physik, Carl von Ossietzky Universität Oldenburg, Germany — 2Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Stuttgart, Germany

We study the behavior and interdependence of quantities such as photoluminescence (PL) yield, quasi-Fermi level splitting and AFM-determined surface roughness on CIGS thin-film absorbers with different thicknesses between 0.25 and 3 µm achieved by varying the throughput speed in an in-line physical vapor deposition (PVD) process. These quantities are studied on the macroscopic as well as on the microscopic scale with a resolution of approximately 1 µm. It is shown that the structural sizes of the inhomogeneities of the absorber layer itself and its lateral photoluminescence properties decrease with decreasing absorber thickness. These results are compared to those on samples thinned by bromine-methanol etching.

Furthermore, we show that varying the thickness of the CdS buffer layer on top of the absorber influences surface recombination and thereby PL yield and quasi-Fermi level splitting. A decrease in surface recombination at higher buffer thicknesses has to be weighed against the increase in absorption in the buffer layer, which in turn decreases carrier generation in the absorber layer.

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2011 > Dresden