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HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.63: Poster

Donnerstag, 17. März 2011, 18:00–21:00, P4

Variation of sulfur content in Cu(In,Ga)(S,Se)2 thin film solar cells — •Martin Knipper, Robin Knecht, Ingo Riedel, and Jürgen Parisi — Energy and Semiconductor Research Laboratory, Department of Physics, University of Oldenburg, 26111 Oldenburg, Germany

Chalcopyrite thin film solar cells made of the compound semiconductor Cu(In,Ga)(S,Se)₂ (CIGSSe) have a strong potential for achieving high efficiencies at low production costs. Volume production of CIGSSe-modules has already started to exploit their favorable attributes such as low cost processing and reasonable module efficiency. In this study we studied industrially produced CIGSSe modules obtained from rapid thermal processing (RTP) for sulfurization. In detail, we investigated the effect of sulfur offer and RTP temperature (500^∘C to 580^∘C) on the photoelectric characteristics of small-area solar cells cut from the modules. Current-voltage profiling under standard test conditions revealed a strong influence of the particular process recipe on the open circuit voltage whereas significant variations of the maximum quantum efficiency can be observed. X-ray diffraction was employed to relate these effects to the crystallographic structure of the actual CIGSSe films. Lock-in thermographic imaging was employed to link apparent film inhomogeneities and disruptions to the specific process recipe.