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HL: Fachverband Halbleiterphysik
HL 85: Poster Session II
HL 85.66: Poster
Thursday, March 17, 2011, 18:00–21:00, P4
Preparation and characterization of Bi2S3 thin films grown with the hot-wall deposition method — •Sebastian ten Haaf and Gerhard Jakob — Institut für Physik, Johannes Gutenberg Universität Mainz, 55099 Mainz, Germany
As a first step in the search for new absorbing materials in inorganic thin film photovoltaics with the benefit of reduced costs in comparison to currently used CIGS, polycrystalline Bi2S3 was deposited in vacuum and examined for its suitability for solar cells.
The bismuth sulfide thin films were grown in a recently designed ultra high vacuum chamber with the hot-wall deposition method under conditions close to thermodynamic equilibrium on ITO coated glass substrates with variation of substrate, wall and source temperature.
For further structural characterization, Bi2S3 was additionally deposited on epitaxial LaAlO3 and SrTiO3 substrates in order to enhance directional growth of the thin films.