Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 85: Poster Session II
HL 85.70: Poster
Donnerstag, 17. März 2011, 18:00–21:00, P4
Metal-assisted Chemical Etching of Multicrystalline Silicon Wafers for Solar Cell Application — •Xiaopeng Li1,2, Stefan L. Schweizer2, and Ralf B. Wehrspohn2,3 — 1Max-Planck Institute of Microstructure Physics — 2Martin-Luther-Universität Halle-Wittenberg — 3Fraunhofer Institute for Mechanics of Materials
Metal-assisted Chemical Etching (MaCE) has been proved as a cost-effective route to create semiconductor nanostructures. In this study, MaCE was employed to texturize different kinds of multicrystalline silicon (mc-Si). Noble nanoparticles were firstly deposited on the non-polished mc-Si by a galvanic displacement reaction, and then further acted as catalysts for silicon etching in a solution containing HF and DI water. By using different metal nanoparticles (Ag, Au, Pt and Pd), we obtained various nano/micro structures on the mc-Si surface, including nanoporous layer, nanowire, and cone-shaped microstructures. These silicon structures are formed independent of crystal orientation and uniform in the wafer size, which exhibited strong light-trap capabilities. This has the potential to allow three dimensional p-n junction to achieve more efficient mc-Si solar cell.