Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.76: Poster

Thursday, March 17, 2011, 18:00–21:00, P4

(contribution withdrawn) Time-resolved photoluminescence imaging of silicon wafers using a CCD camera — •David Kiliani, Gabriel Micard, Bernd Raabe, and Giso Hahn — Abteilung Photovoltaik, Fachbereich Physik, Universität Konstanz, 78457 Konstanz, Germany

A method to record and evaluate time-resolved photoluminescence images of crystalline silicon wafers using a standard silicon-CCD camera was developed. The use of a fast rotating shutter wheel decouples the obtained temporal resolution from the camera exposure time, making it possible to record the decay curve of free minority charge carriers. The transient curve for each pixel is determined from a set of photoluminescence images, making the method calibration-free and much faster than measurements of microwave-detected photoconductance. Lifetime maps for different injection levels can be calculated and show good agreement with steady-state photoluminescence images and quasi-steady-state photoconductance measurements. Compared with dynamic methods using a CMOS camera, a high spatial resolution at much lower equipment cost can be obtained.