Dresden 2011 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.78: Poster

Thursday, March 17, 2011, 18:00–21:00, P4

Lasing in ZnO and CdS Nanowires — •Andreas Thielmann, Sebastian Geburt, Michael Kozlik, Julian Kühnel, Christian Borschel, and Carsten Ronning — Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena

The development of nanoscaled semiconductor lasers could be the key resolution to the still persistent size mismatch between integrated microelectronic devices and semiconductor optoelectronic devices[1]. Semiconductor nanowires offer an elegant path to the development of nanoscaled lasers as their geometry with two planar end facets naturally combines a fiber-like waveguide with an optical resonator. The possible stimulation of the material's emission processes enables lasing of resonant optical modes[2].

ZnO and CdS nanowires of different aspect ratios have been synthesized via the VLS mechanism and were characterized by SEM, EDX and ensemble PL measurements. Power dependent PL measurements on single nanowires excited with pulsed laser light at 355 nm have been performed between 10 K and room temperature and were set in correlation to the nanowires' respective morpholgy. Sharp emission lines which show characteristics of Fabry-Pérot modes could be observed above a power threshold. The measured power dependencies reveal amplified stimulated emission and lasing at high excitation densities.

[1] Ning, C. Z. (2010), physica status solidi (b), 247: 774-788.

[2] M. A. Zimmler et al (2010), Semicond. Sci. Technol., 25: 024001