Dresden 2011 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.80: Poster

Donnerstag, 17. März 2011, 18:00–21:00, P4

Dopant-induced morphology evolution of silicon via wet chemical etching — •Guodong Yuan^{1, 2} and Saskia F. Fischer^{1, 2} — ¹Institute of physics, Humboldt-Universität zu Berlin, D-12489 Berlin, Germany — ²Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum, Germany

Silicon nanowires (SiNWs), as promising building blocks for future nanoelectronic devices, have been the intensive research focus in past decade due to their unique 1-D morphology and related properties. A lot of methods have been developed to fabricate SiNWs, for example, vapour-liquid-solid (VLS), reactive ion etching and electroless etching [1-2]. Among all these methods, the electroless etching approach for SiNWs is rather fascinating with respect to the traditional chemical vapour deposition (CVD) method, which always needs high temperature, hazardous precursors, long duration, expensive source materials and complex vacuum furnace systems. We found that the doping level of silicon wafer can influence morphology of the final etched structures. In low doped silicon wafer, the etching process produced the solid SiNWs, while in the case of highly doped silicon wafer, the wet chemical etching resulted in porous SiNWs or porous silicon due to the interaction between the dopants and aqueous chemical. The morphology evolution with the dopants is discussed in this work.

[1] K. Q. Peng, Y. Wu, H. Fang, X. Y. Zhang, Y. Xu, J. Zhu, Angew. Chem., Int. Ed. 2005, 44, 2737. [2] G. D. Yuan, Y. B. Zhou, C. S. Guo, W. J. Zhang, Y. B. Tang, Y. Q. Li, et al, ACS Nano, 2010, 4, 3045.