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HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.82: Poster

Donnerstag, 17. März 2011, 18:00–21:00, P4

Ivestigation of an InGaN - GaN nanowire heterstructure — •Friederich Limbach¹, Tobias Gotschke¹, Toma Stoica¹, Raffaella Calarco¹, Eli Sutter², Jim Ciston², Ramon Cusco³, Luis Artus³, Stefan Kremling⁴, Sven Höfling⁴, Lukas Worschech⁴, and Detlev Grützmacher¹ — ¹Institute of Bio- and Nanosystems (IBN-1), Research Center Jülich GmbH, D-52425 Jülich, Germany, and JARA-Fundamentals of Future Information Technology — ²Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA — ³Institut Jaume Almera, Consell Superior d’Investigacions Científiques (CSIC), 08028 Barcelona, Catalonia, Spain — ⁴University Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, D-97070 Wurzburg, Germany

InGaN/GaN nanowire (NW) heterostructures grown by molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multi-faceted InGaN cap wrapping the top part of the GaN NW. Transmission electron microscopy images taken from different parts of a InGaN/GaN nanowire show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it. Photoluminescence spectra of these heterostructure NW ensembles show an emission peak at 2.1 eV. However, µ-PL spectra measured on single nanowires reveal much sharper luminescence peaks. A Raman analysis reveals a variation of the In content between 20 % and 30 %, in agreement with PL and TEM investigations.