Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.83: Poster

Thursday, March 17, 2011, 18:00–21:00, P4

Influence of the nanowire interdistance on growth conditions and crystal structure of self-catalyzed GaAs nanowires grown via MBE — Joachim Hubmann¹, •Benedikt Bauer¹, Andreas Rudolph¹, Anna Fontcuberta i Morral², Dieter Schuh¹, Dominique Bougeard¹, Josef Zweck¹, and Elisabeth Reiger¹ — ¹Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Germany — ²Laboratoire des Matériaux Semiconducteurs, EPFL Lausanne, Switzerland

Nanowires grown in bottom-up processes are considered as possible building blocks for future electronic devices. For this use it is necessary to gain control over the growth position of single nanowires. By nanopatterning the SiO₂/GaAs substrate with e-beam lithography we could restrict nanowire growth to predefined sites using the self-catalyzed, Ga-assisted growth technique[1]. We found that there is a correlation between the interdistance of the predefined growth sites and the probability of nanowire growth. This indicates that the effective growth conditions that are seen by a single nanowire are influenced by its local surrounding, in particular by the distance to its neighbours. We attribute the difference of the effective growth conditions to be caused by different diffusion lengths for Ga and As atoms on the SiO₂ surface. As the nanowire crystal structure can be tuned via the growth parameters we further examine how the change of the effective growth conditions affects the crystal structure of the grown nanowires.

[1]Bauer et al., Nanotechnology 21 (2010), 435601.