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HL: Fachverband Halbleiterphysik
HL 85: Poster Session II
HL 85.83: Poster
Thursday, March 17, 2011, 18:00–21:00, P4
Influence of the nanowire interdistance on growth conditions and crystal structure of self-catalyzed GaAs nanowires grown via MBE — Joachim Hubmann1, •Benedikt Bauer1, Andreas Rudolph1, Anna Fontcuberta i Morral2, Dieter Schuh1, Dominique Bougeard1, Josef Zweck1, and Elisabeth Reiger1 — 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Germany — 2Laboratoire des Matériaux Semiconducteurs, EPFL Lausanne, Switzerland
Nanowires grown in bottom-up processes are considered as possible building blocks for future electronic devices. For this use it is necessary to gain control over the growth position of single nanowires. By nanopatterning the SiO2/GaAs substrate with e-beam lithography we could restrict nanowire growth to predefined sites using the self-catalyzed, Ga-assisted growth technique[1]. We found that there is a correlation between the interdistance of the predefined growth sites and the probability of nanowire growth. This indicates that the effective growth conditions that are seen by a single nanowire are influenced by its local surrounding, in particular by the distance to its neighbours. We attribute the difference of the effective growth conditions to be caused by different diffusion lengths for Ga and As atoms on the SiO2 surface. As the nanowire crystal structure can be tuned via the growth parameters we further examine how the change of the effective growth conditions affects the crystal structure of the grown nanowires.
[1]Bauer et al., Nanotechnology 21 (2010), 435601.