Dresden 2011 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 85: Poster Session II
HL 85.86: Poster
Thursday, March 17, 2011, 18:00–21:00, P4
Optical properties of terbium doped ZnS nanowires — •Franziska Riedel, Sebastian Geburt, and Carsten Ronning — Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Jena
Semiconductor nanowires have the potential for fundamental future application in optoelectronic devices to act as nanoscaled light emitters (LED), waveguides or nanolasers. Doping of the nanowires with optical active elements (e.g. rare earth) could offer new optical properties, as it combines the features from well known material with the quasi-1D-structure. Terbium doped ZnS is a promising candidate as it shows strong green emission in thin-film electroluminescence devices, but there are no investigations on 1-D Tb doped ZnS nanostructures yet.
ZnS nanowires were synthesized via the VLS mechanism with diameters between 150-400 nm and lengths of about 60 µ m. The doping with Tb was realized using ion beam implantation and annealing for the recovery of the implantation damage. The structural and morphological properties were analyzed using SEM and TEM. The optical properties were investigated using spatial resolved cathodoluminescence. The Tb doped ZnS nanowires show a strong intra-4f-luminescence. Several transitions could be identified and the luminescence properties of samples with Tb concentrations between 2· 10−3 and 2 at.% were examined at different temperatures and excitation powers.