Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.92: Poster

Thursday, March 17, 2011, 18:00–21:00, P4

Mobility and carrier density in nanoporous indium tin oxide films — •Jaqueline Weissbon¹, Andreas Gondorf¹, Martin Geller¹, Axel Lorke¹, Martina Inhester², Anna Prodi-Schwab², and Dieter Adam² — ¹Fakultät für Physik and CeNIDE, Universität Duisburg-Essen, D-47048 Duisburg — ²Evonik Degussa GmbH, D-45772 Marl, Germany

Indium tin oxide (ITO) has become an indispensable material for a range of electronic devices. It is transparent in the entire visible range and electrically conducting, hence, a well suited material for transpar- ent electrodes. An interesting possibility to realize transparent, con- ducting films without the use of vacuum techniques is the printing of dispersions containing ITO nanoparticles[1]. We study here the charge carrier concentration and mobility of various nanoporous in- dium tin oxide (ITO) films, using Hall measurements and optical spectroscopy[2]. For the carrier density inside the particles ( 2 − 4 · 10²⁰ cm⁻³), the results of these complementary measurement techniques are in good agreement with each other and suggest that even in highly porous materials the common equations for the Hall resistance can be applied. However, for the mobilities in these layers the results differ very strongly: from 50 cm²/Vs in optical spectroscopy (which is comparable to bulk ITO) to 0.4 cm²/Vs in Hall measurements.This suggests that the mobility for electrical transport in nanoporous ITO films is strongly suppressed by scattering at interparticle boundaries.
Ederth et al. Phys. Rev. B 68, 155410 (2003).
Gondorf et al. Phys. Rev. B., submitted (2010).