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HL: Fachverband Halbleiterphysik
HL 85: Poster Session II
HL 85.93: Poster
Thursday, March 17, 2011, 18:00–21:00, P4
Electronic properties of GaN nanowires with different doping concentrations — •Markus Schaefer1, Pascal Hille1, Florian Furtmayr1,2, and Martin Eickhoff1 — 1I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany — 2Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, D-85748 Garching, Germany
Semiconductor nanowires (NWs) are promising candidates for future generations of electronic and optoelectronic devices with a high density of integration. For this purpose it is interesting to combine available top-down approaches with bottom-up growth of NWs.
We report on electronic properties of detached GaN NWs with a typical length of about 500 nm placed on a pre-structured substrate. The NWs were grown in a self-assembled process by plasma assisted molecular beam epitaxy, substrate patterning was achieved by optical and electron beam lithography. The NWs were aligned by dielectrophoretic manipulation, which allows us a parallel deposition of several NWs from the fluid to the pre-patterned electrodes. The influence of different doping concentrations and illumination during measurements to the electronic properties of the NWs is reported.