Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 85: Poster Session II
HL 85.98: Poster
Donnerstag, 17. März 2011, 18:00–21:00, P4
Engineering self-assembled SiGe islands for robust electron confinement in Si — •Roman O. Rezaev1,2, Suwit Kiravittaya1, Vladimir M. Fomin1, Armando Rastelli1, and Oliver G. Schmidt1 — 1Institute for Integrative Nanosciences, IFW-Dresden, D-01069 Dresden, Germany — 2Laboratory of Mathematical Physics, Tomsk Polytechnic University, 634050 Tomsk, Russia
The confinement potential and the energy of localized electron states in the Si matrix surrounding self-assembled SiGe/Si(001) islands are evaluated with realistic structural parameters. For homogeneously alloyed islands overgrown with Si at low substrate temperatures, a nonmonotonic dependence of the energy levels on size and composition is obtained and conditions to achieve the deepest confinement potential are derived within the framework of the available parameters. Shape changes occurring during Si capping at high substrate temperatures are shown to lead to a substantial reduction in the confinement potential. This work was supported by DAAD, DFG SPP 1386, Grant of President of the Russian Federation SS-871.2008.2, Russian Science and Innovations Federal Agency Contract 02.740.11.0238, and Russian Federal program Kadry Grant P691.