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HL: Fachverband Halbleiterphysik

HL 86: Quantum Dots: Growth and Characterization

HL 86.11: Vortrag

Freitag, 18. März 2011, 13:00–13:15, FOE Anorg

Model and applications of local droplet etching — •Christian Heyn — Institut für Angewandte Physik, Jungiusstr 11, 20355 Hamburg

The self-organized in situ drilling of nanoholes into semiconductor surfaces by using liquid metallic droplets as local etchant represents a new degree of freedom for the design of heterostructure devices.[1,2] The process is fully compatible with conventional molecular beam epitaxy (MBE) technology and does not require additional equipment. A model of this local droplet etching (LDE) is presented that is based on a core-shell structure of the droplets. With the model, the evolution of the droplet and substrate surface morphology is calculated. We demonstrate quantitative agreement between model results and measured surface morphologies. Furthermore, also the influence of the process temperature is correctly reproduced by the model. A brief overview on recent applications of the LDE method will be given, including the self-assembly of GaAs quantum rings and dots as well as the fabrication of air-gap heterostructures.

[1] Zh. M. Wang, B. L. Liang, K. A. Sablon, and G. J. Salamo, Appl. Phys. Lett. 90, 113120 (2007).

[2] Ch. Heyn, A. Stemmann, and W. Hansen, Appl. Phys. Lett. 95, 173110 (2009)