Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 86: Quantum Dots: Growth and Characterization
HL 86.1: Vortrag
Freitag, 18. März 2011, 10:15–10:30, FOE Anorg
Effects of in-situ annealing on site-selective InAs quantum dots grown on pre-structured GaAs substrates — •Mathieu Helfrich1,2, Daniel Rülke1,2, Joshua Hendrickson3, Michael Gehl4, Dongzhi Hu1,2, Michael Hetterich1,2, Stefan Linden5, Martin Wegener1,2, Galina Khitrova4, Hyatt M. Gibbs4, Heinz Kalt1,2, and Daniel M. Schaadt1,2 — 1DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede-Str. 1a, 76131 Karlsruhe, Germany — 2Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede-Str. 1, 76131 Karlsruhe, Germany — 3State Scientific Corp., 27-2 Wright Road, Hollis, NH 03049, U. S. A. — 4College of Optical Sciences, University of Arizona, 1630 E. University Bld., Tucson, AZ 85721, U. S. A. — 5Physikalisches Institut, University of Bonn, Nußallee 12, 53115 Bonn, Germany
Spatial localization of quantum dots has been achieved reproducibly within a certain range. The aim has shifted to improving the optical properties, decreasing the quantum dot density and controlling the occupation number of quantum dots per site. We report on our investigations of in-situ annealing of site-selective InAs quantum dots which aim at understanding the influence of this technique on the aforementioned parameters. We observed a morphological transition of double dots merging into single dots during annealing, accompanied by a reduction of quantum dot densities. The quantum dots are analyzed by atomic force microscopy and photoluminescence spectroscopy.