Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 86: Quantum Dots: Growth and Characterization

HL 86.8: Vortrag

Freitag, 18. März 2011, 12:15–12:30, FOE Anorg

InGaN quantum dots growth by metalorganic vapour phase epitaxy for green light emitters — •Tilman Schwaner, Abdul Kadir, Christian Meissner, Markus Pristovsek, and Michael Kneissl — Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany

High efficiency green InGaN light emitting diodes and projection displays are one of the most important challenges in solid state lighting technology. To improve the device performance, we studied InGaN/GaN quantum dots as active region. Self-organized InGaN quantum dots were grown on GaN (0001) in the Stranski-Krastanov growth mode in a horizontal metalorganic vapour phase epitaxy reactor. We varied the growth temperature between 600^∘C - 725^∘C and the growth times between 20 s and 300 s. The resulting indium content was between 10% and 32% as determined by X-ray diffraction measurements. We could clearly see a transition from 2D to 3D growth mode by atomic force microscopy. The wetting layer thicknesses were 4 nm at 675^∘C and 3 nm at 625^∘C, which implies that the wetting layer thickness decreases with increasing indium content. Capping and stacking of multi-InGaN layers are still under investigation. Preliminary photoluminescence and electroluminescence showed strong green emission around 530 nm for a three InGaN quantum dot layer stack.