Dresden 2011 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 87: ZnO: Growth and Defects

HL 87.12: Vortrag

Freitag, 18. März 2011, 13:15–13:30, POT 51

Low temperature CVD-synthesis of nitrogen doped ZnO thin films — •Sebastian Eisermann, Stefan Lautenschlaeger, Michael N. Hofmann, Andreas Laufer, Melanie Pinnisch, Christian Reindl, Julian Benz, Peter J. Klar, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen

We report on the growth of nitrogen doped ZnO thin films prepared at low temperatures by chemical vapour deposition. As substrates, polar and non-polar ZnO single crystals were used. The successful incorporation of nitrogen into the ZnO matrix was confirmed by Secondary Ion Mass Spectrometry (SIMS) and Raman measurements. The optical features were examined by photoluminescence (PL) analysis. Furthermore, ZnO diode structures were fabricated and investigated by IV-measurements. The PL spectra of the nitrogen doped films show a pronounced Donor-Acceptor-Pair-Recombination (DAP) in the energy-region of 3.25 eV. The intensity of this luminescence feature increases with increasing nitrogen content. The IV-measurements reveal typical diode-like behaviour of the ZnO diode structures.