Dresden 2011 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 87: ZnO: Growth and Defects

HL 87.3: Vortrag

Freitag, 18. März 2011, 10:45–11:00, POT 51

Electrochemical deposition of ZnO for Flexible Electronic Devices — •Miriam Schwarz and Veit Wagner — School of Engineering and Science, Jacobs University Bremen, Campus Ring 1, 28759 Bremen, Germany

Electrochemical deposition from aqueous zinc nitrate (Zn(NO₃)₂) solution provides a simple way to deposit crystalline ZnO at low temperatures. Thus, it is a suitable process for flexible substrates like polyethylenterephthalat (PET) foil and makes ZnO to an interesting alternative in the field of flexible electronics in comparison to organic counterparts. The electrochemical approach allows to strongly influence the morphology of the ZnO layer by many well defined deposition parameters like the applied voltage, temperature, time and electrolyte concentration. This correlation is investigated by atomic force microscopy (AFM) and scanning electron microscopy (SEM) for the morphology of the ZnO layer, while Raman spectroscopy is applied to evaluate the crystalline quality of the layers. It reveals that ZnO crystallites of hexagonal shape with diameters depending on the deposition parameters are achieved. In order to study the correlation between the ZnO morphology and its electrical performance in devices, Schottky diodes and field-effect transistors were manufactured and systematically analyzed.