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HL: Fachverband Halbleiterphysik

HL 87: ZnO: Growth and Defects

HL 87.7: Vortrag

Freitag, 18. März 2011, 12:00–12:15, POT 51

Ion-beam Induced Luminescence in n-type Zinc Oxide — •Ronald Stübner¹, Matthias Allardt¹, Daniel Severin², Markus Bender², and Jörg Weber¹ — ¹Technische Universität Dresden, 01062 Dresden, Germany — ²GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt, Germany

Ion implantation of semiconductors introduces a wide variety of defects. Their concentration and depth profile depends on the energy and the fluence of the ions as well as on the temperature of the sample during the irradiation. The in-situ monitoring of these defects helps to understand the creation mechanism and kinetics of the different kinds of defects. The design and assembly of an ionoluminescence measurement system was done during a diploma thesis. The system has been installed at the M-Branch of the ion accelerator at the GSI Helmholtz Centre for Heavy Ion Research in Darmstadt where samples of n-type ZnO single crystals have been irradiated at room temperature and low temperatures, respectively. In this talk, the results of these measurements as well as the results of subsequent photoluminescence investigations will be presented.