Dresden 2011 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 88: Lasers

HL 88.3: Vortrag

Freitag, 18. März 2011, 10:45–11:00, POT 151

Implementing 330 nm UV-output by frequency doubling of a miniaturized red AlGaInP-VECSEL emitting at 660 nm — •Hermann Kahle, Thomas Schwarzbäck, Marcus Eichfelder, Wolfgang-Michael Schulz, Robert Roßbach, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

Vertical external cavity surface-emitting lasers (VECSELs) have emerged as an important category of power-scalable and frequency tunable semiconductor lasers. Using external cavities, optical pumping and intra-cavity optical elements, VECSELs provide the possibility of intra-cavity frequency doubling. We present a VECSEL-Chip design, based on a multi-quantum-well structure with 20 compressively-strained GaInP quantum wells (QWs) grown by metal-organic vapour-phase epitaxy on GaAs substrates for an operation wavelength of around 660 nm. Five QW packages are placed in (Al_0.55Ga_0.45)_0.51In_0.49P cladding layers, which are lattice matched to GaAs, in a resonant periodic gain design. Each package consists of four QWs embedded in (Al_0.33Ga_0.67)_0.51In_0.49P barriers. The 3 λ thick cavity is fabricated on an Al_0.50Ga_0.50As/AlAs distributed Bragg reflector. By inserting a BBO-crystal into the cavity, we present an UV-emitting laser. Frequency-tuning using a birefringent filter will be presented. To improve pump photon absorption in the active region of the VECSEL-Chip, a design with 20 QWs, grouped in pairs, is also possible.