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HL: Fachverband Halbleiterphysik

HL 89: Optical Properties II

HL 89.1: Vortrag

Freitag, 18. März 2011, 10:15–10:30, POT 251

Electric-field-induced second harmonic generation in GaAs — •Marco Lafrentz¹, David Brunne¹, Benjamin Kaminski¹, Dmitri R. Yakovlev^1,2, Victor V. Pavlov², Roman V. Pisarev², and Manfred Bayer¹ — ¹Experimentelle Physik 2, Technische Universitaet Dortmund, D-44221 Dortmund, Germany — ²Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia

We report on electric-field-induced second-harmonic generation (SHG) in the GaAs semiconductor in the vicinity of the band gap. The light has been send along 001-crystallographic direction. In this geometry SHG is forbidden in electric-dipole approximation. In applied electric field the SHG signal arises due to field-induced symmetry breaking causing new optical nonlinearities. Electric-field and temperature investigations assign the strong signal at E(2ω)=1.517 eV for T=2 K to excitonic resonance. This phenomenon is a supplementary tool for detailed investigation of complex suscebtibilities we have reported on in the past ^1,2.

¹ V. V. Pavlov, A. M. Kalashnikova, R. V. Pisarev, I. Sänger, D. R. Yakovlev, and M. Bayer, Phys. Rev. Lett. 94, 157404 (2005)

² I. Sänger, D. R. Yakovlev, B. Kaminski, R. V. Pisarev, V. V. Pavlov, and M. Bayer, Phys. Rev. B 74, 165208 (2006)