Dresden 2011 – wissenschaftliches Programm
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ISS: Intersectional Sessions
ISS 7: Transport and Spectroscopy in Molecular Nanostructures II (CPP, MO, related to SYMN)
ISS 7.5: Vortrag
Donnerstag, 17. März 2011, 11:30–11:45, TOE 317
Conductance enhancement of InAs/InP heterostructure nanowires by surface assembly of oligo-phenylenevinylene molecular wires — •Muhammed Ihab Schukfeh1, Kristian Storm2, Roar Søndergaard3, Anna Szwajca1, Allan Hansen1, Peter Hinze4, Thomas Weimann4, Claes Thelander2, Frederik C. Krebs3, Lars Samuelson2, and Marc Tornow1 — 1Institut für Halbleitertechnik, TU Braunschweig — 2Lund University, Solid State Physics, Sweden — 3Risø DTU, Technical University of Denmark — 4PTB, Braunschweig
The direct combination of organic molecules with semiconductor nanostructures provides an appealing approach towards possible future nanoelectronic systems. In this context, indium-arsenide is a material of particular interest due to the presence of an electron inversion layer at the surface. We have prepared 50 nm diameter InAs nanowires comprising a 5 nm long InP segment, and contacted them by Ti/Au metallic leads on a planar Si/Si-oxide substrate. Electronic transport measurements at 77 K confirmed the presence of the potential barrier of the InP segment. After investigation of the assembly of 12 nm long, dithiolated oligo-phenylenevinylene (OPV) derivative molecules from solution onto planar InAs surfaces the same recipe was applied to the InAs/InP nanowires, which led to a pronounced, non-linear I-V characteristic, with significantly increased currents of up to 1 µA at 1 V bias, for a back-gate voltage of 3 V. We attribute this effect to the OPV molecules tethered to the nanowire surface, thereby increasing the surface conductance across the InP barrier.