Dresden 2011 – scientific programme

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KR: Fachgruppe Kristallographie

KR 2: Multiferroics II (Joint Session of MA, DF, DS, KR, TT)

KR 2.3: Talk

Monday, March 14, 2011, 17:30–17:45, HSZ 04

Strain effect on ferroelectric switching dynamics of epitaxial PbZr_0.52Ti_0.48O₃ films — •Kathrin Dörr¹, Andreas Herklotz¹, Michael Biegalski², and Hans Christen² — ¹IFW Dresden, IMW, Helmholtzstr.20, Dresden — ²CNMS, Oak Ridge National Laboratory, TN, USA

Elastic strain is known to change ferroic properties of thin films such as the remanent polarization. Less understood and little measured is the influence of the lattice strain induced by film-substrate mismatch on the switching dynamics. In this work, reversible biaxial strain has been applied to films on piezoelectric substrates for a study of their strain-dependent ferroelectric switching. PbZr_0.52Ti_0.48O₃ (PZT) films have been epitaxially grown by pulsed laser deposition on piezoelectric substrates of 0.72PbMg_1/3Nb_2/3O₃-0.28PbTiO₃(001) (PMN-PT) buffered with a SrRuO₃/SrTiO₃ double layer. Four-circle x-ray diffraction has been employed to confirm the tetragonal symmetry and to measure the lattice parameters of the films. Measurements of the characteristic ferroelectric switching time at various temperatures and strains show an increase of several percent under compression, revealing a similarly strong strain sensitivity of the switching dynamics as that of the remanent polarization. We attempt to identify the strain dependence of the domain wall velocity.