Dresden 2011 – wissenschaftliches Programm

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KR: Fachgruppe Kristallographie

KR 5: Poster Multiferroics (Joint Session of MA, DF, DS, KR, TT)

KR 5.28: Poster

Dienstag, 15. März 2011, 10:45–13:00, P2

Characterization of TMR-based memory cells with elliptically shaped elements — •Ana Ruiz Calaforra, Andres Conca, Britta Leven, and Burkard Hillebrands — FB Physik and Landesforschungszentrum OPTIMAS, TU Kaiserslautern, 67663 Kaiserslautern, Germany

The optimization of TMR-based memory cells fundamentaly depends on the switching properties of the single storage elements within a cell. In particular, the understanding of the role of the dimension of the TMR-elements is of importance. To study this systematically, a 4×4 memory cell device has been developed, using standard UV-lithography techniques on Si wafers in an industrial environment. It consists of two sets of Cu current lines, which are perpendicularly oriented to each other forming a grid cross structure. On each of the 16 intersections, elliptical elements with the symmetry axis oriented parallel to the current lines are structured. An additional Cu line allows for the resetting of the magnetization of all magnetic elements. Different dimensions for the TMR-elements were tested.

We present a systematic study of the static and dynamic magnetization behavior of the memory cell device for CoFeB elements using a micro-focused time resolved MOKE setup with a spotsize of 400 nm. Experiments using different amplitude and duration (ca. 1 µs) of the applied pulses are presented.

Support by the BMBF project MultiMag (VDI-TZ 13N9913), the state Rhineland-Palatinate and Sensitec GmbH, Mainz is acknowledged.