Dresden 2011 – scientific programme
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MA: Fachverband Magnetismus
MA 30: Magnetic Semiconductors I
MA 30.2: Talk
Wednesday, March 16, 2011, 11:15–11:30, HSZ 401
Tailoring the magnetism of GaMnAs films by ion irradiation — •lin Li1,2, Shengqiang Zhou1,2, Danilo Bürger2, Jürgen Fassbender2, Manfred Helm2, Bryan Gallagher3, Carsten Timm4, and Heidemarie Schmidt2 — 1State Key Laboratory of Nuclear Physics and Technology, Peking University, China — 2Institut für Ionenstrahlphysik und Materialforschung, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Germany — 3School of Physics and Astronomy, University of Nottingham, United Kingdom — 4Institute for Theoretical Physics, Technische Universität Dresden, Germany
Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. The ability to tune the magnetic properties of magnetic semiconductors, e.g. GaMnAs, is an important issue in future spintronics devices. In this contribution, we show the possibility of fine tailoring the magnetism of GaMnAs films by He+ ion irradiation. With increasing the displacement per atom (ion fluence), the GaMnAs films become more insulating step by step and only paramagnetic at the end. The coercivity can be increased by three times from 50 to 165 Oe. At the same time, the irradiated GaMnAs films become magnetically more isotropic. The electrical and structural characterization of the irradiated GaMnAs films indicates that the controlled tailoring of magnetism results from a compensation of holes by irradiation-induced donors [1]. [1] L. Li, et al., J. Phys. D (2011), in press