Dresden 2011 – scientific programme

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MA: Fachverband Magnetismus

MA 30: Magnetic Semiconductors I

MA 30.3: Talk

Wednesday, March 16, 2011, 11:30–11:45, HSZ 401

Stacking faults in (Ga,Mn)As and uniaxial magnetocrystalline anisotropy — •Frantisek Maca, Jan Masek, Milos Kopecky, Jiri Kub, and Tomas Jungwirth — Institute of Physics ASCR, Praha, Czech Republic

The high resolution X-ray difraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers showed a structural anisotropy in the form of stacking faults which are present in the (-1-11) and (111) planes and absent in the (-111) and (1-11) planes. Our full-potential density functional calculations explain the energetic preference of substitutional Mn to decorate the stacking faults. This preference energy is comparable with the formation energy of the faults in a pure GaAs. We surmise that the enhanced Mn density along the common [1-10] direction of the stacking fault planes represents the micro-structural origin of the in-plane uniaxial magnetocrystalline anisotropy of these semiconductors.