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Dresden 2011 – scientific programme

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MA: Fachverband Magnetismus

MA 30: Magnetic Semiconductors I

MA 30.4: Talk

Wednesday, March 16, 2011, 11:45–12:00, HSZ 401

Reliable calculations of generalized RKKY-couplings for dilute magnetic semiconductors — •Stefan Barthel1, Georges Bouzerar2, and Gerd Czycholl11Institute for Theoretical Physics, University of Bremen, Germany — 2School of Engineering and Science, Jacobs University Bremen, Germany

A multiband empirical tight-binding model for magnetically doped group-III-V-semiconductors with zincblende structure (e.g. Ga1−xMnxAs, etc.) for the valence bands is applied to the calculation of generalized RKKY-couplings Jij between magnetic impurities (e.g. Mn2+). Our approach does treat disorder exactly and enables a direct mapping on a disordered Heisenberg model to allow further studies. We will present analytic expressions of the double- and super-exchange terms in the limit of large splitting JS and show numerical results in the dilute regime for realistic parameters of doping concentration, hole density and impurity potential. Finally a comparison to results obtained by more sophisticated methods (Monte-Carlo simulations) is made and we will comment on the discrepancies, which will lead to different Curie temperatures.

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