Dresden 2011 – scientific programme

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MA: Fachverband Magnetismus

MA 30: Magnetic Semiconductors I

MA 30.5: Talk

Wednesday, March 16, 2011, 12:00–12:15, HSZ 401

Magnetic properties of Fe/(Ga,Mn)As interface: thickness and atomic composition dependence — •Svitlana Polesya¹, Sergiy Mankovsky¹, Jan Minár¹, Sven Bornemann¹, Hubert Ebert¹, Matthias Sperl², and Christian Back² — ¹LMU München, Dept. Physikalische Chemie, München, Germany — ²Institut für Experimentelle Physik, Univ. Regensburg, Germany

The dependence of the magnetic properties of the heterogeneous interface system nFe/m(Ga_0.95Mn_0.05As)/GaAs on the thickness m of Ga_0.95Mn_0.05As film as well as the different atomic (Ga or As) termination has been studied within ab initio electronic structure calculations using the SPR-KKR Green’s function method in its tight-binding (TB) version. The m value was varied from 4 to 12 structure units. For all film thicknesses it was found that the ground state magnetic properties at the interface do hardly depend on the Ga_0.95Mn_0.05As film thickness. The influence of Mn interstitials as well as different surface termination (Ga or As) on the magnetic properties at the interface were also examined. The largest modification of magnetic properties for the interface region occurs for the As terminated case in comparison to the Ga terminated one. The finite temperature behavior of magnetic properties was studied by Monte Carlo simulation using calculated exchange coupling parameters. The influence of Mn concentration x as well as various capping layers on the magnetic anisotropy of Ga_1−xMn_xAs films was also studied. The results are compared with recent experimental data.