Dresden 2011 – scientific programme

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MA: Fachverband Magnetismus

MA 37: Magnetic Semiconductors II

MA 37.1: Talk

Wednesday, March 16, 2011, 14:45–15:00, HSZ 401

Magnetic ordering in manganese stabilized zirconia — •Jan Zippel, Michael Lorenz, Jörg Lenzner, Anette Setzer, Pablo Esquinazi, and Marius Grundmann — Universität Leipzig, Institut für Experimentalphysik II, Linnéstraße 5, 04103 Leipzig

The selective control of the spin of electrons as a new degree of freedom in a conventional charge-based electronic offers the possibility to combine the advantages of non-volatility and fast data processing with the properties of conventional semiconductor devices. Recently, ferromagnetism has been observed in nominally undoped oxides like ZnO, HfO₂ or TiO₂ [1]. The origin of the observed ferromagnetism is still a controversy [2].

We present the growth of manganese doped zirconia (MnSZ) with pulsed-laser deposition (PLD). For Mn contents x>15 at%, we were able to stabilize MnSZ in its cubic crystalline phase being predicted to show ferromagnetic properties [3]. A weak, doping independent ferromagnetism in undoped as well as in manganese stabilized zirconia is observed. Hysteresis loops at T = 5K and at room temperature independent of x are shown. The lack of Mn induced magnetic ordering indicates, that the observed magnetic properties are defect related. The saturation magnetization at T = 5K depends on the strain as well as on the defect density of the films supporting the assumption of a defect related origin of the ferromagnetism.

[1] M. Khalid et al., Phys.Rev.B (2009), 80, 035331 [2] M. Khalid et al., Phys.Rev.B (2010) 81, 214414 [3] S. Ostanin et al., Phys. Rev. Lett. (2007) 98, 016101