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Dresden 2011 – scientific programme

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MA: Fachverband Magnetismus

MA 4: Magnetic Coupling Phenomena/ Exchange Bias

MA 4.6: Talk

Monday, March 14, 2011, 12:15–12:30, HSZ 403

Room-temperature magnetocurrent in antiferromagnetically coupled Fe/Si/Fe — •Maximilian Schmid1, Rashid Gareev1, Johann Vancea1, Christian H. Back1, Reinert Schreiber2, Daniel Bürgler2, Claus M. Schneider2, Frank Stromberg3, and Heiko Wende31Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany — 2Forschungszentrum Jülich, Institute of Solid State Research Electronic Properties, 52428 Jülich, Germany — 3Faculty of Physics and Center for Nanointegration Duisburg Essen (CeNIDE), University of Duisburg Essen, 47048 Duisburg, Germany

Epitaxial Si-based hybrid ferromagnet/semiconductor tunneling structures demonstrate very strong antiferromagnetic coupling (AFC) as well as unusual resonant-type megnetoresistance, which vanishes at temperatures above T≅50K. Magnetoresistance effects in Fe/Si/Fe close to room temperature (RT) were not established yet. Here, by using the ballistic electron magneto microscopy (BEMM) technique, with its nanometer-scaled locality, we managed to observe for the first time a spin-dependent ballistic magnetotransport in AFC structures. We found that the hot-electron collector current with energies above the Fe/GaAsP Schottky barrier reflects the relative orientations of the electrodes and changes from IcAP≅50 fA for antiparallel alignment to IcAP≅150 fA for the parallel one. Thus, the magnetocurrent([(IcPIcAP)/(IcAP)]) is near 200% at RT. The measured BEMM hysteresis loops match nicely with the magnetic MOKE hysteresis data. This work is supported by the project DFG 9209379.

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